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Description
INFINEON IPP60R165CPXKSA1 Power MOSFET, N Channel, 21 A, 600 V, 0.15 ohm, 10 V, 3 VThe IPP60R165CP is a 650V CoolMOS N channel Power MOSFET features ultra low gate charge. It is designed for hard switching topologies, server and telecom applications. Low figure of merit(FOM) RON x Qg Extreme dV dt rated High peak current capability Qualified according to JEDEC for target applications Very fast switching High current capability Significant reduction of conduction and switching losses High power density and efficiency for superior
- Low figure-of-merit(FOM) RON x Qg
- Extreme dV/dt rated
- High peak current capability
- Qualified according to JEDEC for target applications
- Very fast switching
- High current capability
- Significant reduction of conduction and switching losses
- High power density and efficiency for superior power conversion systems
- Best-in-class performance ratio
Applications
Industrial, Power Management, Communications & Networking, Consumer Electronics, Alternative Energy
Product details
| Power Dissipation Pd | 192W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 21A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3V |
| Product Range | - |
| Drain Source Voltage Vds | 600V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-220 |
| On Resistance Rds(on) | 0.15ohm |
| MSL | MSL 3 - 168 hours |
Other details
| Brand | INFINEON |
| Part Number | IPP60R165CPXKSA1 |
| Quantity | Each |
| Technical Data Sheet EN | |
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